device physics的例句大全

As we shrink MEMS to NEMS, device physics becomes increasingly dominated by the surfaces.

当我们把尺寸从mems缩小到NEMS时, 表面在元件物理的地位就变得越加重要.

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Then, the key factors of blocking voltages, current gain, frequency response and power loss were analyzed by combining semiconductor physics and semiconductor device physics, together with Junction Termination Technology ( JTT), device design principles.

进而，根据半导体物理及半导体器件设计原则着重分析了影响器件击穿电压、电流增益、频率响应的主要因素，结合结终端技术分析和器件设计要点，设计一种新结构。

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Wireless LAN technology makes the network access not limited by physics circuit any more. The embedded technology makes the communication device become more microminiaturized with lower power consumption and stronger function.

无线局域网技术使得网络的接入方式不再受物理线路的局限，嵌入式技术使得通信设备向着微型化、低功耗、高性能的方向发展。

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With in-depth knowledge on semiconductor device physics and practical experience on processing.

深入解半导体元件物理及制程。

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Has a good knowledge of analog circuitry, device physics and process.

模拟电路，器件和工艺有较好基础。

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By means of the formulae derived from device physics of HBT, the influence of device parameters on the minimum noise figure is also represented.

同时通过基于异质结双极晶体管器件物理的公式，给出了器件参数对器件最小噪声系数的影响。

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The adsorption properties of metal atoms on semiconductor and the structural changes of semiconductor atoms adsorb on metal surface are all important subjects in semiconductor device physics and modern electronic industry.

金属原子吸附在半导体表面的吸附特征，以及半导体颗粒吸附在金属表面上的界面结构和电子性质，都是半导体器件物理和现代电子工业的重要课题。

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This paper briefly introduces its operational mechanism, basic structure, depletion and enhancement modes, fabrication technology, a comparison of its current performance with that of conventional GaAs FET, preliminary analysis of its device physics and the calculation of V-I charateristics.

本文简述了它的工作机理、基本结构、耗尽型及增强型模式、工艺制造、目前达到的性能与通常的GaAs FET的比较、初步的器件物理分析和伏安特性计算。

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When an engineer or scientist designs a new electronic device or physics experiment, the job of constructing and operating the test often falls to a technician in this field.

当一个工程师或科学家设计了一种新的电子设备模型或物理实验方案，实施和操作这些方案工作往往落在这一领域的技术人员身上。

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When scaled down to the ultra deep sub-micron field, the traditional CMOS device encounters serious challenges in device physics and fabrication technologies.

进入超深亚微米领域以后，传统CMOS器件遇到了器件物理、工艺技术等方面难以逾越的障碍。

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