1、

Computer simulation of the stationary domain in a Gunn diode with a positive doping gradient near the anode

Gunn器件中掺杂梯度引起的静止畴的计算机模拟

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2、

However, as elevating doping gradient and reducing the medium thickness, the intensity of ASE effect will rises and depress the gain efficiency.

但是,随着掺杂浓度梯度的升高与介质片厚的降低,介质的增益水平将由于ASE效应降低。

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3、

Study on the Al/ Ag doping functional gradient thin films deposited by pulsed excimer laser

脉冲激光沉积Al/Ag掺杂功能梯度薄膜

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4、
5、

A novel structure of ideal ohmic contact p+ ( SiGeC)-n& n+ diodes with three-step graded doping concentration in the base region is presented, and the changing doping concentration gradient is also optimized.

将新器件结构与新型半导体材料相结合,提出了一种新型的n-区三层渐变掺杂理想欧姆接触型p+(SiGeC)-n&n+异质结功率二极管,并对n-区的杂质分布梯度进行了优化。

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