semiconductor laser

[ˌsemikənˈdʌktə ˈleizə]
  • 释义

    半导体光激射器;

数据更新时间:2026-01-15 11:48:27
1、

It has also pointed out the basic requirements to individual semiconductor laser's power.

提出了对单个半导体激光器驱动电源的基本要求.

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2、

Study into Semiconductor Laser's Environment Temperature Controller

半导体激光器环境温度控制仪的研究

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3、

The treatment group was treated with electroacupuncture, massage, TDP, Scalpel , semiconductor-laser, and Chinese herbals.

治疗组施以电针灸 、 推拿按摩 、 TDP神灯照射 、 小针刀手术、半导体激光治疗仪照射 、 中药内服熏洗.

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4、

Objective : To evaluate the effect and safety of semiconductor laser bleaching on tetracycline-stained vital teeth.

目的: 评价半导体激光漂白四环素牙的临床效果和安全性.

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5、

Mode of Semiconductor Laser with a Lower Refractive Index Coupling Layer

低折射率耦合层半导体激光器模式特性的分析

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6、

The source is made of semiconductor laser, collimating and coupling system, narrow pulse driving circuit.

光源包括半导体激光器 、 准直耦合元件和窄脉冲发射驱动电路.

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7、

Thermal impedance of 4.982 × 10~ (-3) K · cm~ 2/ W can fit the need of high power semiconductor laser stacks under the actual drop of operation water pressure.

但在热沉实际工作的水压降条件下,热阻为4.982×10-3K·cm2/W,它能满足高功率激光器叠阵的需要。

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8、

Circuit Model of a Semiconductor Laser Amplifier and Its Noise Characteristics Analysis

半导体激光放大器的电路模型及噪声特性分析

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9、

Such a semiconductor laser can produce high power across a wide frequency.

这种半导体雷射可产生频率范围很广的高功率雷射.

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10、

Based on the thermoelectric refrigeration principle and PID parameter self-tuning control technique, a temperature controller for semiconductor laser's environment test is designed.

基于热电制冷原理和PID参数自整定理论,本论文设计了一种半导体激光器环境的温度控制仪。

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11、

The Technology of High Precision Temperature Control of Semiconductor Laser

半导体激光器的高精度温度控制优化设计

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12、

With the semiconductor laser used widely, the requisition of its power is higher and higher.

随着半导体激光器应用的日益广泛, 对其功率的要求也越来越大.

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13、

An Underwater Laser Imaging System with Low Power Semiconductor Laser

低功率半导体激光水下成像系统

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14、

Aim : To observe the effect of semiconductor laser treatment on vocal cords leukoplakia.

目的: 观察半导体激光治疗声带粘膜白斑的临床效果.

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15、

Effective pain relieving was achieved in pain clinic with low powered semiconductor laser irradiation in acupoints.

目的探讨半导体激光穴位照射镇痛效应及其镇痛的机制.

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16、

Super power semiconductor laser array and its application

高功率半导体激光器阵列及其应用

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17、

Objective : To compare the and disadvantages between power system and semiconductor laser in partial inferior turbinectomy.

目的: 比较动力系统与半导体激光下鼻甲部分切除术的优缺点.

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18、

Study of laser lofting using semiconductor laser for railway tunnel

利用半导体激光束实现激光隧道放样研究

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19、

The radiation frequency of semiconductor laser is shifted correspondently when the injecting current is changed.

半导体异质结激光器在注入的电流发生变化时,输出激光的光频也随之改变.

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20、

The power steadiness and control technology of semiconductor laser

半导体激光器的功率稳恒控制技术

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21、

The Relationship of Failure Mechanisms and Die Sinter Process of Semiconductor Laser

半导体激光器的主要失效机理及其与芯片烧结工艺的相关性

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22、

Temperature Control System of Semiconductor Laser Based on Modern Control Theory Designed and Analyzed

基于现代控制理论分析设计的半导体激光恒温系统

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23、

Vertical-Cavity Surface-Emitting Lasers ( VCSEL ) is a new type semiconductor laser.

垂直腔面发射激光器 是一种新型的半导体激光器.

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24、

Objective : To explore the value of semiconductor laser in partial inferior turbinectomy.

目的: 探讨鼻内窥镜引导下行半导体激光下鼻甲部分切除术的应用价值.

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25、

An optical stabilizer for semiconductor laser controlled by monolithic microcomputer is studied in this paper.

介绍了单片机控制的半导体激光器的稳光强器,系统地阐述了其工作原理、硬件及软件设计.

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26、

The experiment of wavelength conversion using tunable external-cavity semiconductor laser is performed.

利用可调谐外腔半导体激光器进行了波长转换实验

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27、

A pulse semiconductor laser was measured, and the thermal relaxation time was obtained to be 1.2 ms.

利用此方法对一种半导体激光器进行了测试,得到其热弛豫时间为1.2ms。

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28、

Study of Thermal Interaction and Its Improvement Technique in Semiconductor Laser Arrays

列阵半导体激光器中热相互作用及改进技术的研究

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29、

Satellite, missile guidance, semiconductor laser, infrared thermal image system, infrared detector, photoelectric device, etc.

卫星 、 导弹制导 、 半导体激光器 、 红外热成像 、 红外探测器 、 光电器件等.

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30、

Using a same semiconductor laser scheme, the thermal impedance of diamond thermal management is only 40% of AlN thermal management.

采用完全相同的半导体激光器结构,金刚石膜热沉的热阻仅为氮化铝热沉的40%。

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