substrate temperature

The Ft thin film temperature Sensor design. technological process. Pt-film, Substrate and packaging material and their relationship have been discussed.

本文讨论了铂薄膜温度传感器的设计、制造工艺、膜料与衬底及封装材料的关系。

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Finally, the channel-structured glass substrate was sealed to a cover glass plate by using room temperature bonding technique.

最后，采用室温键合技术，将带有微纳结构的基片与盖片封合成玻璃微-纳流控复合芯片。

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Single crystal MgO has good thermal stability, light transmittance, electrical insulativity, chemical stability and mechanical properties. It is mainly used as substrate for high temperature superconductor ( HTS) thin films and also a kind of important optical material.

单晶MgO在耐温性、透光率、热导率、电绝缘性、化学稳定性和机械强度等方面性能优异，被广泛用作高温超导等薄膜生长的基片材料，同时也是一种重要的光学材料。

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Then it is printed onto a high-alumina ceramics substrate by silk screen print method. A superconducting wire of thickness in the range of 20~ 30 μ m, and zero resistance temperature 82 K, was successfully obtained.

用丝网印刷-烧结工艺，在高铝陶瓷基板上制得了厚约20～30μm，零电阻温度82K的厚膜超导电带。

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Coating and the substrate surface temperature of the coating would have a bad contraction stress, caused by cracking and peeling off the coating.

涂层与基体表面的温度差会使涂层产生收缩应力，引起涂层开裂和剥落。

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The effect of substrate temperature on the accumulation of disorder is substantial.

衬底温度对于无序区积累的影响是很显著的.

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In a resistance thermal vacuum evaporator with a special heater ( coolant) holder, which can control the sample substrate temperature, Au and In 2O 3 films were deposited on glass slides by a thermal and an activated reactive evaporation technique, respectively.

用带特殊热（冷）阱的可控制基片温度的电阻加热式真空蒸镀薄膜装置，把吸收透明导电薄膜Au和In2O3分别通过热蒸镀和活化反应淀积在玻璃基片上。

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When the temperature of substrate was at the range of 380 ℃ to 470 ℃, the thin films had atomically smooth.

从不同基片温度的超晶格薄膜的AFM分析表明，在基片温度为380℃到470℃的温度范围内，薄膜具有原子级光滑表面。

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The temperature difference between the thermal conductor and the glass substrate was also studied.

此外对石墨导热体和置于其上的玻璃基片两者之间的温度差别做了初步研究。

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Aluminum-doped zinc oxide ( ZnO ∶ Al) films are deposited on Corning 1737 glass by RF magnetron sputtering under the substrate temperature of 250 ℃, RF power of 100W and pure argon gas.

在Corning1737玻璃衬底上射频磁控溅射沉积了铝掺杂ZnO薄膜（ZnO∶Al）.薄膜沉积在衬底温度250℃、溅射功率100W和纯氩气氛中进行。

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